Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 295-298

  Kinoshita, T ^a   Itoh, K M ^a   Muto, J ^a   Schadt, M ^b   Pensl, G ^b   Takeda, K ^c  

^a KEIO UNIVERSITY   (Japan)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

4H SiC; 6H SiC; Anisotropy; Hall Effect; Mobility

Indexed keywords

BAND STRUCTURE; HALL EFFECT; MAGNETIC ANISOTROPY; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; THERMAL EFFECTS;

HALL MOBILITY;

SILICON CARBIDE;

EID: 0031648147     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.295     Document Type: Article

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