A new short channel mosfet with an atomic-layer-doped impurity-profile (ald-mosfet)

Japanese Journal of Applied Physics

Volumn 22, Issue , 1983, Pages 267-270

  Yamaguchi, Ken ^a   Shiraki, Yasuhiro ^a   Katayama, Yoshifumi ^a   Murayama, Yoshimasa ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84861732229     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAPS.22S1.267     Document Type: Article

References (0)