MOS Device Modeling at 77 K

IEEE Transactions on Electron Devices

Volumn 36, Issue 8, 1989, Pages 1464-1474

  Selberherr, Siegfried ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; LOW TEMPERATURE ENGINEERING; MATHEMATICAL TECHNIQUES--NUMERICAL METHODS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

CARRIER GENERATION RECOMBINATION; CARRIER MOBILITY; CARRIER TRANSPORT; CRYOGENIC ELECTRONICS; IMPURITY FREEZE OUT; MINIMOS 4 SIMULATOR;

SEMICONDUCTOR DEVICES;

EID: 0024718053     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.30960     Document Type: Article

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