-
2
-
-
0023345328
-
A mobility model for submicrometer MOSFET device simulations
-
A. Hiroki, S. Odanaka, K. Ohe, and H. Esaki, “A mobility model for submicrometer MOSFET device simulations”, IEEE Electron Device Lett., vol. EDL-8, pp. 231-233, 1987.
-
(1987)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 231-233
-
-
Hiroki, A.1
Odanaka, S.2
Ohe, K.3
Esaki, H.4
-
3
-
-
0023292564
-
A physically based mobility model for MOSFET numerical simulation
-
T. Nishida and C. T. Sah, “A physically based mobility model for MOSFET numerical simulation”, IEEE Trans. Electron Devices, vol. ED-34, pp. 310-320, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 310-320
-
-
Nishida, T.1
Sah, C.T.2
-
4
-
-
0020918485
-
Semi-empirical equations for electron velocity in silicon: part II-MOS inversion layer
-
S. A. Schwarz and S. E. Russek, “Semi-empirical equations for electron velocity in silicon: part II-MOS inversion layer”, IEEE Trans. Electron Devices, vol. ED-30, pp. 1634-1639, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1634-1639
-
-
Schwarz, S.A.1
Russek, S.E.2
-
5
-
-
0018960654
-
Velocity of surface carriers in inversion layers of silicon
-
R. W. Cohen and R. S. Muller, “Velocity of surface carriers in inversion layers of silicon”, Solid-State Electron., vol. 23, pp. 35-40, 1980.
-
(1980)
Solid-State Electron.
, vol.23
, pp. 35-40
-
-
Cohen, R.W.1
Muller, R.S.2
-
6
-
-
0020717155
-
High-field velocity of electrons at the Si-Si02 interface as determined by time-of-flight technique
-
J. A. Cooper, Jr. and D. F. Nelson, “High-field velocity of electrons at the Si-Si02 interface as determined by time-of-flight technique”, J. Appl. Phys., vol. 54, pp. 1445-1456, 1983.
-
(1983)
J. Appl. Phys.
, vol.54
, pp. 1445-1456
-
-
Cooper, J.A.1
Nelson, D.F.2
-
7
-
-
0023831987
-
High-field drift velocity of electrons in silicon surface layers
-
A. Modelli and S. Manzini, “High-field drift velocity of electrons in silicon surface layers”, Solid-State Electron., vol. 31, pp. 99-104, 1988.
-
(1988)
Solid-State Electron.
, vol.31
, pp. 99-104
-
-
Modelli, A.1
Manzini, S.2
-
8
-
-
0019003692
-
Relation of drift velocity to low-field mobility and high-field saturation velocity
-
K. K. Thornber, “Relation of drift velocity to low-field mobility and high-field saturation velocity”, J. Appl. Phys., vol. 51, pp. 2127-2136, 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 2127-2136
-
-
Thornber, K.K.1
-
9
-
-
36149013317
-
Electrical properties of n-type germanium
-
P. P. Debye and E. M. Conwell, “Electrical properties of n-type germanium”, Phys. Rev., vol. 93, pp. 693-706, 1954.
-
(1954)
Phys. Rev.
, vol.93
, pp. 693-706
-
-
Debye, P.P.1
Conwell, E.M.2
-
10
-
-
0001633790
-
The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface
-
C. T. Sah, T. H. Ning, and L. L. Tschopp, “The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface”, Surface Sci., vol. 32, pp. 561-575, 1972.
-
(1972)
Surface Sci.
, vol.32
, pp. 561-575
-
-
Sah, C.T.1
Ning, T.H.2
Tschopp, L.L.3
-
11
-
-
0015656859
-
Relative importance of phonon scattering to carrier mobility in Si surface layer at room temperature
-
Y. C. Cheng, and E. A. Sullivan, “Relative importance of phonon scattering to carrier mobility in Si surface layer at room temperature”, J. Appl. Phys., vol. 44, no. 8, pp. 3619-3526, 1973.
-
(1973)
J. Appl. Phys.
, vol.44
, Issue.8
, pp. 3619-3626
-
-
Cheng, Y.C.1
Sullivan, E.A.2
-
12
-
-
0018683243
-
Characterization of the electron mobility in the inverted (100) Si surface
-
A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the inverted (100) Si surface”, in 1979 IEDM Tech. Dig., pp. 18-21.
-
1979 IEDM Tech. Dig.
, pp. 18-21
-
-
Sabnis, A.G.1
Clemens, J.T.2
-
13
-
-
0019048875
-
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
-
S. C. Sun and J. D. Plummer, “Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces”, IEEE Trans. Electron Devices., vol. ED-27, pp. 1497-1508, 1980.
-
(1980)
IEEE Trans. Electron Devices.
, vol.ED-27
, pp. 1497-1508
-
-
Sun, S.C.1
Plummer, J.D.2
-
14
-
-
0018491058
-
Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's
-
K. Yamaguchi, “Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's”, IEEE Trans. Electron Devices, vol. ED-26, pp. 1068-1074, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1068-1074
-
-
Yamaguchi, K.1
-
15
-
-
0001156050
-
Self-consistent results for n-type Si inversion layers
-
F. Stern, “Self-consistent results for n-type Si inversion layers”, Phys. Rev. B, vol. 5, no. 12, pp. 4891-4899, 1972.
-
(1972)
Phys. Rev. B
, vol.5
, Issue.12
, pp. 4891-4899
-
-
Stern, F.1
-
16
-
-
0020783138
-
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
-
(For the hole mobility in bulk silicon we adopt their Eq. (4) with μmax still given by our Eq. (9))
-
G. Masetti, M. Severi, and S. Solmi, “Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon”, IEEE Trans. Electron Devices, vol. ED-30, pp. 764-769, 1983. (For the hole mobility in bulk silicon we adopt their Eq. (4) with μmax still given by our Eq. (9)).
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 764-769
-
-
Masetti, G.1
Severi, M.2
Solmi, S.3
-
17
-
-
0017453673
-
A review of some charge transport properties of silicon
-
and references therein
-
C. Jacoboni, C. Canali, G. Ottaviani, and A. A. Alberigi Quaranta, “A review of some charge transport properties of silicon”, Sot id-State Electron., vol. 20, pp. 77-89, 1977, and references therein.
-
(1977)
Sot id-State Electron.
, vol.20
, pp. 77-89
-
-
Jacoboni, C.1
Canali, C.2
Ottaviani, G.3
Alberigi Quaranta, A.A.4
-
19
-
-
0022103653
-
Minority-carrier diffusion coefficients and mobilities in silicon
-
A. Neugroschel, “Minority-carrier diffusion coefficients and mobilities in silicon”, IEEE Electron Device Lett., vol. EDL-6, pp. 425-427, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 425-427
-
-
Neugroschel, A.1
-
20
-
-
0000760238
-
Minority-carrier diffusion coefficients in highly doped silicon
-
J. Dziewior and D. Silver, “Minority-carrier diffusion coefficients in highly doped silicon”, Appl. Phys. Lett., vol. 35, pp. 170-172, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.35
, pp. 170-172
-
-
Dziewior, J.1
Silver, D.2
-
21
-
-
0022685880
-
Measurement of hole mobility in heavily doped n-type silicon
-
S. E. Swirhun, J. A. Del Alamo, and R. M. Swanson, “Measurement of hole mobility in heavily doped n-type silicon”, IEEE Electron Device Lett., vol. EDL-8, pp. 168-171, 1986.
-
(1986)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 168-171
-
-
Swirhun, S.E.1
Del Alamo, J.A.2
Swanson, R.M.3
-
22
-
-
36049059178
-
Transport properties of electrons in inverted silicon surfaces
-
F. F. Fang and A. B. Fowler, “Transport properties of electrons in inverted silicon surfaces”, Phys. Rev. B, vol. 169, no. 3, pp. 619-631, 1968.
-
(1968)
Phys. Rev. B
, vol.169
, Issue.3
, pp. 619-631
-
-
Fang, F.F.1
Fowler, A.B.2
-
23
-
-
49549126543
-
Electron scattering in silicon inversion layers by oxide and surface roughness
-
A. Hartstein, T. H. Ning, and A. B. Fowler, “Electron scattering in silicon inversion layers by oxide and surface roughness”, Surface Sci., vol. 58, pp. 178-181, 1976.
-
(1976)
Surface Sci.
, vol.58
, pp. 178-181
-
-
Hartstein, A.1
Ning, T.H.2
Fowler, A.B.3
-
24
-
-
0038488959
-
Surface roughness induced scattering and band tailing
-
S. M. Goodnick, R. G. Gann, D. K. Ferry, C. W. Wilmsen, and O. L. Krivanek, “Surface roughness induced scattering and band tailing”, Surface Sci., vol. 113, pp. 233-238, 1982.
-
(1982)
Surface Sci.
, vol.113
, pp. 233-238
-
-
Goodnick, S.M.1
Gann, R.G.2
Ferry, D.K.3
Wilmsen, C.W.4
Krivanek, O.L.5
-
25
-
-
0343004103
-
Effect of Coulomb scattering in n-type silicon inversion layers
-
S. Manzini, “Effect of Coulomb scattering in n-type silicon inversion layers”, J. Appl. Phys., vol. 57, no. 2, pp. 411-414, 1985.
-
(1985)
J. Appl. Phys.
, vol.57
, Issue.2
, pp. 411-414
-
-
Manzini, S.1
-
26
-
-
0346771220
-
One-dimensional semiconductor device analysis (SEDAN)
-
Stanford University Tech. Rep. G-201-5, Oct
-
D. C. D'Avanzo, M. Vanzi, and R. W. Dutton, “One-dimensional semiconductor device analysis (SEDAN)”, Stanford University Tech. Rep. G-201-5, Oct. 1979.
-
(1979)
-
-
D'Avanzo, D.C.1
Vanzi, M.2
Dutton, R.W.3
-
27
-
-
0020192889
-
Optimized extraction of MOS model parameters
-
D. E. Ward and K. Doganis, “Optimized extraction of MOS model parameters”, IEEE Trans. Computer-Aided Design, vol. CAD-1, pp. 163-168, 1982.
-
(1982)
IEEE Trans. Computer-Aided Design
, vol.CAD-1
, pp. 163-168
-
-
Ward, D.E.1
Doganis, K.2
-
28
-
-
0014749359
-
Hot electron effects and saturation velocity in silicon inversion layers
-
F. F. Fang and A. B. Fowler, “Hot electron effects and saturation velocity in silicon inversion layers”, J. Appl. Phys., vol. 41, pp. 1825-1831, 1970.
-
(1970)
J. Appl. Phys.
, vol.41
, pp. 1825-1831
-
-
Fang, F.F.1
Fowler, A.B.2
-
29
-
-
0020763683
-
A mobility model for carriers in the MOS inversion layer
-
K. Yamaguchi, “A mobility model for carriers in the MOS inversion layer”, IEEE Trans. Electron Devices, vol. 30, pp. 658-663, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.30
, pp. 658-663
-
-
Yamaguchi, K.1
-
30
-
-
0009806361
-
HFIELDS: A highly flexible 2-D semiconductor-device analysis program
-
presented at Nasecode IV, Dublin, Ireland, June 19-21
-
G. Baccarani, R. Guerrieri, P. Ciampolini, and M. Rudan, “HFIELDS: A highly flexible 2-D semiconductor-device analysis program”, presented at Nasecode IV, Dublin, Ireland, June 19-21, 1985.
-
(1985)
-
-
Baccarani, G.1
Guerrieri, R.2
Ciampolini, P.3
Rudan, M.4
|