0.1 μm delta-doped MOSFET using post low-energy implanting selective epitaxy

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 19-20

  Noda, K ^a   Uchida, T ^a   Tatsumi, T ^a   Aoyama, T ^a   Nakajima, K ^a   Miyamoto, H ^a   Hashimoto, T ^a   Sasaki, I ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; DELAY CIRCUITS; EPITAXIAL GROWTH; ION IMPLANTATION; OSCILLATORS (ELECTRONIC); PERFORMANCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SWITCHING;

GATE DELAY; SHORT CHANNEL EFFECTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0028599189     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)