The effect of randomness in the distribution of impurity atoms on FET thresholds

Applied Physics

Volumn 8, Issue 3, 1975, Pages 251-259

  Keyes, Robert W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0016572578     PISSN: 03403793     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/BF00896619     Document Type: Article

References (13)

1. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique