Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy

Applied Physics Letters

Volumn 54, Issue 19, 1989, Pages 1869-1871

  Nakagawa, Kiyokazu ^a   Van Gorkum, Aart A ^a   Shiraki, Yasuhiro ^a  

^a HITACHI LTD   (Japan)

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Indexed keywords

EID: 36549091800     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.101263     Document Type: Article

References (10)