Influence of statistical spatial-nonuniformity of dopant atoms on threshold voltage in a system of many MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 842-848

  Mizuno, Tomohisa ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Depletion layer width; Dopant atom; Fluctuation; MOSFET; Nonuniformity; Statistics; System; Threshold voltage; ULSI

Indexed keywords

ATOMS; GATES (TRANSISTOR); MATHEMATICAL MODELS; STATISTICAL METHODS; SUBSTRATES; ULSI CIRCUITS;

DEPLETION LAYER WIDTH; DOPANT ATOMS; FLUCTUATION; STATISTICAL SPATIAL NONUNIFORMITY; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030084540     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.842     Document Type: Article

References (6)

1. T. Mizuno, J. Okamura and A. Toriumi: IEEE Trans. Electron Devices 41 (1994) 2216.
2. T. Mizuno, M. Iwase, H. Niiyama, T. Shibata, K. Fujisaki, A. Toriumi and Y. Ushiku: Proc. Symp. VLSI Technology, Honolulu, 1994 (IEEE Service Center, Piscataway, 1994) p. 13.
3. L. D. Yau: Solid State Electron. 17 (1974) 1059.
4. T. Mizuno and A. Toriumi: J. Appl. Phys. 77 (1995) 3538.
5. T. Mizuno: Inst. Electron. Inf. & Commun. Eng. Tech. Rep. 94 (1994) No. 186, p. 13.
6. J. Satsuma: Kakuritsu/Tohkei (Probability and Statistics) (Iwanami, Tokyo, 1989) p. 118 [in Japanese].