Factors Determining the Damage Coefficients and the Low-Frequency Noise in MeV Proton-Irradiated Silicon Diodes

IEEE Transactions on Nuclear Science

Volumn 45, Issue 1, 1998, Pages 89-97

  Simoen, E ^a,b,c,d   Claeys, C ^a,b,c,d   Ohyama, H ^a,b,c,d  

^a IEEE   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

High energy proton irradiations; Low frequency noise damage coefficients; Silicon diodes; Silicon substrate hardening

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH; ELECTRIC CURRENTS; HIGH ENERGY PHYSICS; IONIZATION OF SOLIDS; IRRADIATION; PROTONS; RADIATION DAMAGE; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

PROTON IRRADIATION; SILICON DIODES;

SEMICONDUCTOR DIODES;

EID: 0032002772     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659558     Document Type: Article

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