Interpretation of carrier recombination lifetime and diffusion length measurements in silicon

Journal of the Electrochemical Society

Volumn 143, Issue 4, 1996, Pages 1399-1405

  Bullis, W Murray ^a,c   Huff, Howard R ^b  

^a Materials and Metrology   (United States)

^b SEMATECH   (United States)

^c Semiconduct Equip and Mat Intl   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONTAMINATION; CRYSTAL DEFECTS; DIFFUSION; IMPURITIES; INTEGRATED CIRCUIT MANUFACTURE; METALS; SILICON WAFERS;

CARRIER RECOMBINATION LIFETIME; DIFFUSION LENGTH; REDUCED METAL CONTAMINATION LEVELS;

SEMICONDUCTING SILICON;

EID: 0001097635     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836650     Document Type: Article

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