Radiation-Induced Defect Introduction Rates in Semiconductors

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1913-1923

  Drevinsky, P J ^a   Frederickson, A R ^a   Elsaesser, D W ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; RADIATION DAMAGE; REACTION KINETICS; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

DEFECT INTRODUCTION RATE; ELECTRON HOLE PAIRS; RECOMBINATION ENHANCED DIFFUSION;

SEMICONDUCTOR DEVICES;

EID: 0028709943     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340523     Document Type: Article

References (21)

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