The response of Si p-n junction diodes to proton irradiation

Semiconductor Science and Technology

Volumn 11, Issue 10, 1996, Pages 1434-1442

  Simoen, E ^a   Vanhellemont, J ^a   Claeys, C ^a   Kaniava, A ^b   Gaubas, E ^b  

^a IMEC   (Belgium)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CURRENT DENSITY; DEEP LEVEL TRANSIENT SPECTROSCOPY; LEAKAGE CURRENTS; PROTONS; RADIATION EFFECTS; RADIATION HARDENING; SILICON WAFERS; SUBSTRATES; THERMAL EFFECTS;

LEAKAGE CURRENT DENSITY; PROTON IRRADIATION; SHALLOW RECOMBINATION CENTRE; SILICON JUNCTION DIODES;

SEMICONDUCTOR DIODES;

EID: 0030261562     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/014     Document Type: Article

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