On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1924-1931

  Vanhellemont, J ^a   Simoen, E ^a   Claeys, C ^a   Kaniava, A ^b   Gaubas, E ^b   Bosman, G ^c   Johlander, B ^d   Adams, L ^d   Clauws, P ^e  

^a IMEC   (Belgium)

^b VILNIUS UNIVERSITY   (Lithuania)

^c UNIVERSITY OF FLORIDA   (United States)

^d EUROPEAN SPACE AGENCY   (Netherlands)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; ELECTRIC PROPERTIES; ELEMENTARY PARTICLES; RADIATION DAMAGE; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SPURIOUS SIGNAL NOISE; SUBSTRATES;

CARRIER LIFETIME; NOISE SPECTROSCOPY;

SEMICONDUCTOR DIODES;

EID: 0028697952     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340525     Document Type: Article

References (14)

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