A Comparison of Monte Carlo and Analytic Treatments of Displacement Damage in Si Microvolumes

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1974-1983

  Dale, C J ^a   Chen, L ^b   McNulty, P J ^b   Marshall, P W ^c   Burke, E A ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b CLEMSON UNIVERSITY   (United States)

^c SFA INC   (United States)

^d Cosultant ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; IONIZATION OF SOLIDS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROTONS; RADIATION DAMAGE; SPALLING;

DISPLACEMENT DAMAGE; MICROVOLUME; NONIONIZING ENERGY LOSS; SOFTWARE PACKAGE CUPID;

SEMICONDUCTING SILICON;

EID: 0028711773     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340532     Document Type: Article

References (27)

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24. Private communication with Andrew Holland. The 2.5 μm overlayer estimate in [14] was too high.
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