The effect of radiation induced defects on the performance of high resistivity silicon diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 224-227

  Matheson, J ^a   Robbins, M ^a,b   Watts, S ^a  

^a BRUNEL UNIVERSITY   (United Kingdom)

^b E2V TECHNOLOGIES   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; GAMMA RAYS; MATHEMATICAL MODELS; NEUTRON IRRADIATION; PHOSPHORUS; RADIATION EFFECTS; REACTION KINETICS; SEMICONDUCTING SILICON;

ACCEPTOR; DEFECT KINETICS; HOLE TRAPS; RADIATION INDUCED DEFECTS; SILICON DIODES;

SEMICONDUCTOR DIODES;

EID: 0030216335     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01413-6     Document Type: Article

References (8)

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