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Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 251-256

Lifetime considerations for high-energy proton irradiated Si p-n junction diodes

(3) Simoen, E a Vanhellemont, J a,b Claeys, C a

a IMEC (Belgium)

b SILTRONIC AG (Germany)

Author keywords

p n junction diodes; Proton irradiation; Recombination lifetime; Silicon

Indexed keywords

ACTIVATION ENERGY; DEFECTS; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SILICON; CRYSTAL GROWTH FROM MELT; CURRENT VOLTAGE CHARACTERISTICS; PROTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

EFFECTIVE ACTIVATION ENERGY; ELECTRICAL PARAMETER; HIGH ENERGY PROTON; INJECTION CONDITIONS; PN JUNCTION DIODES; RECOMBINATION LIFETIME; SI P-N JUNCTIONS; TEMPERATURE DEPENDENT;

SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR DIODES;

FLOAT ZONE SILICON; HIGH ENERGY PROTON IRRADIATION; RECOMBINATION LIFETIME MEASUREMENTS;

EID: 16844387571 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.57-58.251 Document Type: Article

Times cited : (2)

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