The Concept of Generation and Recombination Lifetimes In Semiconductors

IEEE Transactions on Electron Devices

Volumn 29, Issue 8, 1982, Pages 1336-1338

  Schroder, D K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS;

EID: 0020169645     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20879     Document Type: Article

References (10)

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3. C. D. Lustig, A. W. Baird, H. Veron, J. B. Armstrong, and G. P. Watts, “The multilayer gas-discharge display panel,” in Proc. SID Int. Symp., p. 128, May 1974.
4. T. Inoguchi, M. Takeda, Y. Kakihara, Y. Nakata, and M. Yoshida, “Stable high-brightness thin-film electroluminescent panels,” in Proc. SID Int. Symp., p. 84, May 1974.
5. B. Kazan, Photosensitive rapid switching circuit, U.S. Patent 3 270 206, 1966.
6. W. J. Harmon, Jr., “General consideration and circuit techniques for gas-discharge flat-panel displays,” in IEDM Tech. Dig., p. 72, Mar. 1970.
7. I. Greenberg, “Electroluminescent display and logic devices,” Electronics, p. 31, Mar. 1961.
8. S. C. Requa, Digitally addressed solid state electroluminescent display device, U.S. Patent 3 479 646, 1969.
9. K. Okamoto, Y. Nasu, and Y. Hannakawa, “Low-threshold-voltage thin-film electroluminescent device,” in Conf. Record of 1980 Biennial Display Research Conf., p. 143, 1980.
10. T. Suntola, “Performance of atomic layer epitaxy devices,” in Proc. SID Int. Symp., p. 20, Apr. 1981.