Low‐temperature anneal of the divacancy in p‐type silicon: A transformation from V2 to VxOy complexes?

Applied Physics Letters

Volumn 66, Issue 22, 1995, Pages 3056-3057

  Trauwaert, M ^a   Vanhellemont, J ^a   Maes, H E ^a   Van Bavel, A ^b   Langouche, G ^b   Clauws, P ^c  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

ANNEALING; DEFECT STATES; DLTS; ELECTRON BEAMS; ENERGY LEVELS; PHYSICAL RADIATION EFFECTS; P TYPE CONDUCTORS; SILICON; VACANCIES; VANADIUM COMPLEXES

Indexed keywords

EID: 0013112449     PISSN: 00036951     EISSN: 10773118     Source Type: Journal    
DOI: 10.1063/1.114276     Document Type: Article

References (8)

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