Generation and Annealing Behaviour of MeV Proton and 252Cf Irradiation Induced Deep Levels in Silicon Diodes

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 479-486

  Vanhellemont, J V ^a   Simoen, E ^a   Trauwaert, M A ^a   Claeys, C ^b   Kaniava, A ^b   Johlander, B ^c   Harboe Sorensen R ^c   Adams, L ^d   Clauws, P ^d  

^a IMEC   (Belgium)

^b VILNIUS UNIVERSITY   (Lithuania)

^c EUROPEAN SPACE AGENCY   (Netherlands)

^d GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CALIFORNIUM; ELECTRIC PROPERTIES; INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; OXYGEN; PROTONS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CZOCHRALSKI SILICON SUBSTRATES; DIODE LEAKAGE CURRENT; DOPANT; FLOATING ZONE; FOURIER TRANSFORM INFRA RED SPECTROSCOPY; INTERNAL GETTERING TREATMENT; SILICON DIODES; THERMAL ANNEALING;

SEMICONDUCTOR DIODES;

EID: 0028447727     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299783     Document Type: Article

References (14)

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