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Electronics Letters

Volumn 31, Issue 12, 1995, Pages 1016-1018

Low-frequency noise behaviour of high-energy electron irradiated Si n+p junction diodes

(4) Dubuc, J P a,b Simoen, E a Vasina, P a,c Claeys, C a

a IMEC (Belgium)

b UNIV MONTPELLIER (France)

c BRNO UNIVERSITY OF TECHNOLOGY (Czech Republic)

Author keywords

One over f noise; pn junctions; Radiation effects; Radiation hardening (electronics); Semiconductor device noise

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); IRRADIATION; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SPURIOUS SIGNAL NOISE; SUBSTRATES;

HIGH ENERGY ELECTRON IRRADIATION; LOW FREQUENCY NOISE;

SEMICONDUCTOR DIODES;

EID: 0029639485 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19950644 Document Type: Article

Times cited : (9)

References (7)

1
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2
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- The impact of the substrate on the low-frequency noise of silicon n*p junction diodes
- SIMEON, E., BOSMAN, G., VANHELLEMONT, J., and CLAEY, C.: ‘The impact of the substrate on the low-frequency noise of silicon n*p junction diodes’, Appl. Phys. Lett., 1995
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3
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- Empirical excess 1 if noise behavior of Si n*p junction diodes
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- submitted to IEEE Trans. Electron Devices
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4
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- Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing
- ANDERSSON, G.I., ANDERSSON, M.O., and ENGSTROM, O.: ‘Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing’, J. Appl. Phys., 1992, 72. pp. 2680-2691
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- ANDERSSON, G.I.¹ ANDERSSON, M.O.² ENGSTROM, O.³

5
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- Surface state related 1 if noise in p-n junctions
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6
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- The surface recombination model for p-n diode flicker noise
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7
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- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
- GROVE, A.S., and FITZGERALD, D.J.: ‘Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions’, Solid-State Electron., 1966, 9, pp. 783-807
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- GROVE, A.S.¹ FITZGERALD, D.J.²

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