Correlation of Lifetime with Recombination Centers in Electron-Irradiated P-Type Silicon

Journal of the Electrochemical Society

Volumn 130, Issue 9, 1983, Pages 1916-1918

  Baliga, B J ^a   Evwaraye, A O ^a  

^a GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0020822279     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2120123     Document Type: Article

References (7)

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4. P. M. Mooney, L. J. Cheng, M. Suli, J. D. Gerson, and J. W. Corbett, Phys. Rev. B, 15, 3836 (1977).
5. B. J. Baliga and E. Sun, IEEE Trans. Electron Devices, ed-24, 685 (1977).
6. A. O. Evwaraye and B. J. Baliga, Journal of the Electrochemical Society, 124, 913 (1977).
7. D. C. Lewis, Solid-State Electron., 18, 87 (1975).