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Physica Status Solidi (A) Applied Research

Volumn 156, Issue 1, 1996, Pages 215-223

Influence of the substrate on the degradation of irradiated Si diodes

(9) Ohyama, H a Vanhellemont, J b Simoen, E b Claeys, C b Takami, Y c Hayama, K a Hakata, T a Sunaga, H d Kobayashi, K e

a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY (Japan)

b IMEC (Belgium)

c RIKKYO UNIVERSITY (Japan)

d TAKASAKI ADVANCED RADIATION RESEARCH INSTITUTE (Japan)

e NECIC Microcomputer Systems Ltd (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; DEGRADATION; ELECTRONS; ENERGY DISSIPATION; IRRADIATION; NEUTRONS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SUBSTRATES;

ELECTRON IRRADIATION; GETTERING EFFECT; NONIONIZING ENERGY LOSS; OXYGEN CONCENTRATION; OXYGEN PRECIPITATION;

SEMICONDUCTOR DIODES;

EID: 0030190642 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.2211560126 Document Type: Article

Times cited : (6)

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