Mechanism of anomalous degradation of silicon solar cells subjected to high-fluence irradiation

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2990-2997

  Ohshima, Takeshi ^a   Monta, Yousuke ^a   Nashiyama, Isamu ^a   Kawasaki, Osamu ^b   Hisamatsu, Tadashi ^b   Nakao, Tetsuya ^b   Wakow, Yoshihito ^c   Matsuda, Sumio ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; PROTONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MODELS; SHORT CIRCUIT CURRENTS; SOLAR RADIATION; SPACE APPLICATIONS;

HIGH FLUENCE IRRADIATION; MINORITY CARRIER LIFETIME;

SILICON SOLAR CELLS;

EID: 0030349559     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556896     Document Type: Article

References (14)

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