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Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 179-182

Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes

(4) Simoen, E a Dubuc, J P a Vanhellemont, J a Claeys, C a

a IMEC (Belgium)

Author keywords

Noise processes and phenomena; Oxygen; P n junctions; Silicon

Indexed keywords

EID: 0041686951 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/0921-5107(95)01254-0 Document Type: Article

Times cited : (2)

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