Comparison of neutron, proton and gamma ray effects in semiconductor devices

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1621-1628

  Raymond, J P ^a   Petersen, E L ^b  

^a MISSION RESEARCH CORPORATION   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70349207645     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337526     Document Type: Article

References (25)

1. E.A. Burke, “Energy Dependence of Proton-Induced Displacement Damage in Silicon, IEEE Trans. on Nuclear Science, vol. NS-33, no. 6, pp. 1276–1281; December, 1986.
2. G. P. Summers, E. A. Wolicki, M. A. Xapsos, P. Marshall, C. J. Dale, M. A. Gehlhausen and R. D. Blice, “Energy Dependence of Proton Displacement Damage Factors for Bipolar Transistors,” IEEE Trans. on Nuclear Science, vol. NS-33, no. 6, pp. 1282–1286; December, 1986.
3. G. P. Summers, E. A. Burke, C. J. Dale, E. A. Wolicki, P. Marshall and M. Gehlhausen, “Correlation of Particle-Induced Displacement Damage in Silicon,” presented at the 1987 IEEE Nuclear and Space Radiation Effects Conference, Snowmass, Colorado; July, 1987.
4. V. A. J. van Lint, G. Gigas and J. Barengoltz, “Correlation of Displacement Effects Produced b y Electrons, Protons, and Neutrons in Silicon,” IEEE Trans. on Nuclear Science, vol. NS-22, no. 6, pp. 2663–2668; December, 1975.
5. J. R. Adams and R. J. Sokel, “Neutron Irradiation for Prevention of Latch-up in MOS Integrated Circuits,” IEEE Trans. on Nuclear Science, vol. NS-26, no. 6, pp. 5069–5073; December, 1979.
6. J. E. Schroeder, A. Ochoa, Jr., and P. V. Dressendorfer, “Latch-up Elimination in Bulk CMOS LSI Circuits,” IEEE Trans. on Nuclear Science, vol. NS-27, no. 6, pp. 1735–1738; December, 1980.
7. G. J. Brucker, “Transient and Steady-State Response of CMOS/SOS,” IEEE Trans. on Nuclear for Science, vol. NS-27, no. 6, pp. 1674–1679; December, 1980.
8. D. M. Long, “Hardness of MOS and Bipolar Integrated Circuits,” IEEE Trans. on Nuclear Science, vol. NS-27, no. 6, pp. 1674–1679; December, 1980.
9. J. P. Raymond, “MSI/LSI Radiation Response, Characterization and Testing,” IEEE Trans. on Nuclear Science, vol. NS-21, no. 6, pp. 308–314; December, 1974.
10. W. E. Prtice, K. E. Martin, D. K. Nichols, M. K. Gauthier, S.F. Brown, “Total-Dose Radiation Effects Data for Semiconductor Devices,” JPL Publication 81-66; December 1, 1981.
11. K. E. Martin, M. K. Gauthier, J. R. Coss, A. R. V. Dantas, W. E. Price, “Total-Dose Radiation Effects Data for Semiconductor Devices, 1985 Supplement,” JPL Publication 85–43, October, 15, 1985.
12. D. K. Myers, “Radiation Effects on Commerical Semiconductor 4 Kilobit Memories,” IEEE Trans. on Nuclear Science, vol. NS-23, no. 6, pp. 1732–1737; December, 1976.
13. D. G. Cleveland, “Dose Rate Effects in MOS Mirco-circuits,” circuits,” IEEE Trans. on Nuclear Science, vo l. NS-31, no. 6, pp. 1348–1353; December, 1984.
14. R. L. Pease, R. M. Turfler, D. Platteter, D. Emily and R. Blice, “Total Dose Effects in Recessed Oxide Digital Bipolar Microcircuits,” IEEE Trans. on Nuclear Science, vol. NS-30, no. 6, pp. 4216–4223; December, 1983.
15. J. F. Janni, “Proton Range-Energy Tables,” Atomic Data and Nuclear Data Tables, vol. 27, p. 341; 1982.
16. R. L. Pease, E. W. Enlow and G. L. Dinger, “Comparison of Proton and Neutron Carrier Removal Rates,” presented at the 1987 IEEE Nuclear and Space Radiation Effects Conference, Snowmass, Colorado; July, 1987
17. T. R. Oldham and J. M. McGarrity, “Ionization of Silicon-Dioxide by Heavy Charged Particles,” IEEE Trans. on Nuclear Science, vol. NS-28, no. 6, ppp. 3968–3974; December, 1981.
18. G. J. Brucker, E. G. Stassinopoulos, O. van Gunten, L. S. August and T. M. Jordan, “The Damage Equivalence of Electrons, Protons, and Gamma Rays in MOS Devices,” IEEE Trans. on Nuclear Science, vo l. NS-29, no. 6, pp. 1966–1969; December, 1982.
19. G. J. Brucker, O. Van Gunten, E. G. Stassinopoulos, P. Shapiro, L. S. August, T. M. Jordan, “Recovery of Damage in Rad-Hard MOS Devices During and After Irradiation b y Electrons, Protons, Alphas, and Gamma Rays,” IEEE Trans. on Nuclear Science, vol. NS-30, no. 6, pp. 4162–4168; December, 1983.
20. E. G. Stassinopoulos, G. J. Brucker, O. van Gunten, “Total-Dose and Dose-Rate Dependence of Proton Damage in MOS Devices During and After Irradiation,” IEEE Trans. on Nuclear Science, vol. NS-31, no. 6, pp. 1444-1447; December, 1984.
21. T. R. Oldham, “Analysis of Damage in MOS Devices for Several Radiation Environments,” IEEE Trans. on Nuclear Science, vol. NS-31, no. 6, pp. 1236–1241; December, 1984.
22. R. W. Tallon, M. R. Ackermann, W. T. Kemp, M. H. Owen and D. P. Saunders, “A Comparison of Ionizing Radiation Damage in MOSFETs from Cobalt-60 Gamma Rays, 0.5 to 22 MeV Protons and 1 to 7 MeV Electrons,” IEEE Trans. on Nuclear Science, vol. NS-32, no. 6, pp. 4393–4398; December, 1985.
23. W.J. Stapor, L.S. August and D.H. Wilson, “Proton and Heavy-Ion Radiation Damage Studies in MOS Transistors,” IEEE Trans. on Nuclear Science, vol. NS-32, no. 6, pp. 4399–4404; December, 1985.
24. D. R. Locker, et al., “The Present State of Hardness of Electronic Devices and Sensor Types to High Energy Protons,” Air Force Weapons Laboratory Technical Report AFWL-TR-81-81; January, 1982.
25. L. M. Choate and T. R. Schmidt, “New Neutron Simulation Capabilities Provided b y the Sandia Pulse Reactor-III (SPR-III) and the Upgraded Annular Core Pulse Reactor (APCR),” IEEE Trans. on Nuclear Science, vol. NS-25, no. 6, pp. 1625–1628; December, 1978.