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Volumn 12, Issue 11, 1991, Pages 623-625

Direct Evidence of Gate Oxide Thickness Increase in Tungsten Polycide Processes

Author keywords

[No Author keywords available]

Indexed keywords

MASS SPECTROMETRY; MICROSCOPIC EXAMINATION--TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS;

EID: 0026254958     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119218     Document Type: Article
Times cited : (21)

References (4)
  • 1
    • 0005946116 scopus 로고
    • Si/W changes and film peeling during polycide annealing
    • C. S. Yoo, T. H. Lin, and N. S. Tsai, “Si/W changes and film peeling during polycide annealing,” Japan. J. Appl. Phys., vol. 29, pp. 2535–2540, 1990.
    • (1990) Japan. J. Appl. Phys. , vol.29 , pp. 2535-2540
    • Yoo, C.S.1    Lin, T.H.2    Tsai, N.S.3
  • 2
    • 0024663207 scopus 로고
    • The effect of fluorine in silicon dioxide gate dielectrics
    • J. Wright and K. C. Saraswat, “The effect of fluorine in silicon dioxide gate dielectrics,” IEEE Trans. Electron Devices, vol. 36, pp. 879–889, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 879-889
    • Wright, J.1    Saraswat, K.C.2
  • 3
    • 0344206649 scopus 로고
    • Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film
    • Y. Shioya, S. Kawamura, I. Kobayashi, M. Madeda, and K. Yanagida, “Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film,” J. Appl. Phys., vol. 61, pp. 5102–5109, 1987.
    • (1987) J. Appl. Phys. , vol.61 , pp. 5102-5109
    • Shioya, Y.1    Kawamura, S.2    Kobayashi, I.3    Madeda, M.4    Yanagida, K.5
  • 4
    • 0024170162 scopus 로고
    • 0.5 micron CMOS for high performance at 33 V
    • R. A. Chapman et al., “0.5 micron CMOS for high performance at 33 V,” in IEDM Tech. Dig., 1988, pp. 52–55.
    • (1988) IEDM Tech. Dig. , pp. 52-55
    • Chapman, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.