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Volumn 12, Issue 11, 1991, Pages 623-625
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Direct Evidence of Gate Oxide Thickness Increase in Tungsten Polycide Processes
a a a b |
Author keywords
[No Author keywords available]
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Indexed keywords
MASS SPECTROMETRY;
MICROSCOPIC EXAMINATION--TRANSMISSION ELECTRON MICROSCOPY;
TUNGSTEN COMPOUNDS;
GATE OXIDES;
TUNGSTEN POLYCIDE PROCESSES;
INTEGRATED CIRCUITS, CMOS;
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EID: 0026254958
PISSN: 07413106
EISSN: 15580563
Source Type: Journal
DOI: 10.1109/55.119218 Document Type: Article |
Times cited : (21)
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References (4)
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