Lifetime Prediction Methods for p-MOSFET’s: A Comparative Study of Standard and Charge-Pumning Lifetime Criteria

IEEE Transactions on Electron Devices

Volumn 42, Issue 1, 1995, Pages 101-108

  Vuillaume, D ^b  

^a Inst Sup d'Electron Mediterranee   (France)

^b Institut d'Electronique et de Microélectroniaue du Nord ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CONSTRAINT THEORY; CORRELATION METHODS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; ELECTRONS; GATES (TRANSISTOR); TRANSCONDUCTANCE; VARIATIONAL TECHNIQUES; VOLTAGE MEASUREMENT;

CHARGE PUMPING; DEEP SUBMICROMETER DEVICES; HOT CARRIER IMMUNITY; HOT ELECTRON INJECTIONS; INTERFACE TRAP GENERATION; NEGATIVE TRAPPED CHARGE; OXIDE CHARGE; THRESHOLD VOLTAGE SHIFT; TIME DEPENDENT DEGRADATION; TRANSCONDUCTANCE DEGRADATION;

MOSFET DEVICES;

EID: 0029183752     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370029     Document Type: Article

References (18)

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