UNIFIED MODEL FOR HOT-ELECTRON CURRENTS IN MOSFETS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1981, Pages 600-603

  Ko, P K ^a   Muller, R S ^a   Hu, C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENTS; DRAIN REGION; GATE CURRENTS; HOT-ELECTRON CURRENTS; MOSFETS; PROCESSING PARAMETERS; SATURATION CURRENTS; UNIFIED MODEL;

EFFECTIVE-ELECTRON-TEMPERATURE MODEL;

TRANSISTORS, FIELD EFFECT;

EID: 0019664378     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)