Examination of Gradual-Junction p-MOS Structures for Hot Carrier Control Using a New Lifetime Extraction Method

IEEE Transactions on Electron Devices

Volumn 39, Issue 10, 1992, Pages 2290-2297

  Doyle, Brian S ^a   Mistry, Kaizad R ^a   Jackson, Daniel B ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRONS; OXIDES; SEMICONDUCTOR JUNCTIONS;

GRADUAL-JUNCTION PMOS; HOT CARRIER LIFETIMES; HOT ELECTRON GATE CURRENTS; JUNCTION ENGINEERING; LIFETIME PREDICTION; LIGHTLY DOPED DRAIN;

MOS DEVICES;

EID: 0026938338     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.158801     Document Type: Article

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