Kinetics of hot-carrier degradation of submicron n-channel LDD MOSFET's

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 855-858

  Okhonin, S ^a   Hessler, T ^a   Dutoit, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIER DEGRADATION; LDD MOSFET; N-CHANNEL; SUBMICRON;

EID: 0342499799     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Okhonin, T. Hessler, and M. Dutoit, IEEE ED 43, p. 605 (1996).
2. J. P. Miéville, J. Barrier, Z.M. Shi, M. Dutoit, Y. Oppliger, J.M. Moret, and A. Perret, Microelectron. Engin., vol. 13, p. 189 (1991).
3. J. P. Miéville, G. van den bosch, L. Deferm, R. Bellens, G. Groeseneken, H.E. Maes, and W. Schoenmaker, IEDM Techn. Dig., p. 83 (1994).
4. J. Chung, P.-K. Ko and C. Hu, IEEE ED 38, p. 1362 (1991).
5. V.-H. Chan and J. Chung, IEEE ED 42, p. 957 (1995).