Hot-Electron Degradation in NMOSFET’s: Results from Temperature Anneal

IEEE Transactions on Electron Devices

Volumn 41, Issue 7, 1994, Pages 1303-1305

  Ling, C H ^a   Ah, L K ^a   Choi, W K ^a   Tan, S E ^a   Ang, D S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRIC NETWORK PARAMETERS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; INTERFACES (MATERIALS); THERMAL EFFECTS;

HOT ELECTRON DEGRADATION; INTERFACE TRAPS; SATURATION DRAIN CURRENT;

MOSFET DEVICES;

EID: 0028466055     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293364     Document Type: Article

References (10)

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