An Empirical Model for Device Degradation Due to Hot-Carrier Injection

IEEE Electron Device Letters

Volumn 4, Issue 4, 1983, Pages 111-113

  Takeda, E ^a   Suzuki, N ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET;

TRANSISTORS, FIELD EFFECT;

EID: 0020733451     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1983.25667     Document Type: Article

References (11)

1. T. H. Ning, P. W. Cook, R. H. Dennard, C. M. Osburn, S. E. Schuster, and H. N. Yu, “1 um MOSFET VLSI technology: Part 5 Hot-electron design constraints,” IEEE J. Solid-State Circuits, vol. SC-14, pp. 268-275, April, 1979.
2. B. Eitan and D. Frohman-Bentchkowsky, “Hot-electron injection into the oxide in n-channel MOS devices,” IEEE Trans. Electron Devices, vol. ED-28, pp. 328-340, 1981.
3. P. E. Cottrell, R. R. Troutman, and T. H. Ning, “Hot-electron emission in n-channel IGFET's,” IEEE Trans. Electron Devices, vol. ED-26, pp. 520-533, 1979.
4. T. H. Ning, “Hot-electron emission from silicon into silicon dioxide,” Solid-State Electron., vol. 21, pp. 273-282, 1978.
5. C. Hu, “Lucky-electron model of channel hot-electron emission.” in IEDM Tech. Dig., p. 22, 1979.
6. E. Takeda, H. Kume, Y. Nakagome, and S. Asai, “An As-P(n + -n-) double diffused drain MOSFET for VLSIs,” Symp. on VLSI Tech., Dig. Tech. Papers, Oiso, Japan, pp. 40-41, Sept., 1982.
7. Y. Nakagome, E. Takeda, H. Kume, and S. Asai, “New observation of hot-carrier injection phenomena,” Dig. Tech. Paper, The 14th Conf. on Solid State Devices, pp. 63-64, Aug. 1982.
8. R. B. Fair and R. C. Sun, “Threshold-voltage instability in MOSFET's due to channel hot-hole emission,” IEEE Trans. Electron Devices, vol. ED-28, pp. 83-93, Jan. 1981.
9. H. Gesch, J. P. Leburton, and G. E. Dorda, “Generation of interface states by hot hole injection in MOSFET's,” IEEE Trans. Electron Devices, vol. ED-29, pp. 913-918, 1982.
10. E. Takeda, Y. Nakagome, H. Kume, N. Suzuki, and S. Asai, “Comparison of characteristics of n-channel and p-channel MOSFET's for VLSI's,” IEEE Trans. Electron Devices, to be published.
11. E. Takeda, H. Kume, T. Toyabe, and S. Asai, “Submicron MOSFET structures for minimizing channel hot-electron injection,” IEEE Trans. Electron Devices, vol. ED-29, pp. 612-618. April, 1982.