A New Charge Pumping Method for Determining the Spatial Distribution of Hot-Carrier-Induced Fixed Charge in p-MOSFET’s

IEEE Transactions on Electron Devices

Volumn 40, Issue 10, 1993, Pages 1768-1779

  Hara, Hisashi ^b   Morimoto, Toyota ^b   Iwai, Hiroshi ^b  

^a IBM   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTRIC CHARGE MEASUREMENT; ELECTRIC CURRENT DISTRIBUTION; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR JUNCTIONS; STRESSES; SUBSTRATES;

CHARGE PUMPING METHOD; HOT CARRIER INDUCED FIXED CHARGE; SPATIAL DISTRIBUTION;

MOSFET DEVICES;

EID: 0027680606     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.277333     Document Type: Article

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