Evaluation of LDD MOSFET's Based on Hot-Electron-Induced Degradation

IEEE Electron Device Letters

Volumn 5, Issue 5, 1984, Pages 162-165

  Hsu, F C ^a   Chiu, K Y ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - EVALUATION;

CURRENT-DRIVEN DEGRADATION CRITERION; HOT-ELECTRON-INDUCED DEGRADATION; LIGHTLY DOPED DRAIN (LDD);

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021425363     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1984.25870     Document Type: Article

References (12)

1. C. Hu, “Hot-electron effects in MOSFET's,” IEDM Tech. Dig., p. 176, 1983.
2. S. Tam et al., “Hot-electron currents in very short-channel MOSFET's,” IEEE Electron Device Lett., vol. EDL-4, p. 249, 1983.
3. E. Takeda et al., “Device performance degradation due to hot-carrier injection at energies below the Si-SiO2 energy barrier,” IEDM Tech. Dig., p. 396, 1983.
4. S. Ogura et al., “Design and characteristics of the lightly-doped drain-source (LDD) IGFET,” IEEE Trans. Electron Devices, vol. ED-27, p. 1359, 1980.
5. S. Ogura et al., “A half micron MOSFET using double implanted LDD,” IEDM Tech. Dig., p. 718, 1982.
6. S. Rathnam et al., “An optimized 0.5 micron LDD transistor,” IEDM Tech. Dig., p. 237, 1983.
7. Y. Matsumoto et al., “Optimized and reliable LDD structure for 1 µm NMOSFET based on substrate current analysis,” IEDM Tech. Dig., p. 392, 1983.
8. F.-C. Hsu and S. Tam, “Relationship between MOSFET degradation and hot-electron-induced interface-state generation,” IEEE Electron Device Lett., vol. EDL-5, pp. 50-52, Feb. 1984.
9. S. Tam, F-C. Hsu, and C. Hu, “A physical model for hot-electron-induced MOSFET degradation,” presented at IEEE Semiconductor Interface Specialist Conf., (Ft. Lauderdale, FL), 1983; “A physical model of channel hot-electron injection induced degradation in MOSFET's,” to be published.
10. F.-C. Hsu and H. R. Grinolds, “Structure-dependent MOSFET degradation due to hot-electron injection,” IEDM Tech. Dig., p. 742, 1983; “Structure-enhanced MOSFET degradation due to hot-electron injection,” IEEE Electron Device Lett., vol. EDL-5, pp. 71-74, 1984.
11. E. Takeda and N. Suzuki, “An empirical model for device degradation due to hot-carrier injection,” IEEE Electron Device Lett., vol. EDL-4, p. 111, 1983.
12. H. Matsumoto et al., “Effects of long-term stress on IGFET degradations due to hot-electron trapping,” IEEE Trans. Electron Devices, vol. ED-28, p. 923, 1981.