Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs

IEEE Transactions on Electron Devices

Volumn 62, Issue 2, 2015, Pages 316-323

  Lelis, Aivars J ^a   Green, Ron ^a   Habersat, Daniel B ^a   El, Mooro ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Oxide trap; power MOSFET; reliability; silicon carbide (SiC); threshold voltage.

Indexed keywords

ACTIVATION ENERGY; BIAS VOLTAGE; POWER MOSFET; RELIABILITY; SILICON CARBIDE;

BASIC MECHANISM; BIAS TEMPERATURE STRESS; DEVICE RELIABILITY; INTERFACIAL OXIDES; OXIDE TRAPS; RELIABILITY TESTING; SILICON CARBIDES (SIC); THRESHOLD-VOLTAGE INSTABILITIES;

THRESHOLD VOLTAGE;

EID: 85027958098     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2356172     Document Type: Article

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