Two-way tunneling model of oxide trap charging and discharging in SiC MOSFETs

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 465-468

  Lelis, A ^a   Habersat, D ^a   Green, R ^a   Goldsman, N ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

MOSFET; Oxide trap; Threshold voltage instability; Tunneling model

Indexed keywords

BIAS VOLTAGE; MOSFET DEVICES; THRESHOLD VOLTAGE;

BIAS STRESS; MEASUREMENT TIME; MOS-FET; OXIDE TRAPS; SIC MOSFETS; THRESHOLD-VOLTAGE INSTABILITIES; TUNNELING MODELS; TWO WAYS;

SILICON CARBIDE;

EID: 84861417719     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.465     Document Type: Conference Paper

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