Bias-stress induced threshold voltage and drain current instability in 4H-SiC DMOSFETs

Solid-State Electronics

Volumn 52, Issue 1, 2008, Pages 164-170

  Okayama, T ^a   Arthur, S D ^b   Garrett, J L ^b   Rao, M V ^a  

^a Krasnow Institute for Advanced Study   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

DMOSFET; Drain current transient; Interface traps; Mobile ions; SiC; Threshold voltage shift

Indexed keywords

BIAS VOLTAGE; DRAIN CURRENT; GATE DIELECTRICS; INTERFACES (MATERIALS); MOSFET DEVICES; SILICON CARBIDE;

DMOSFET; DRAIN CURRENT TRANSIENT; INTERFACE TRAPS; MOBILE IONS; THRESHOLD-VOLTAGE SHIFT;

THRESHOLD VOLTAGE;

EID: 36248979192     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.031     Document Type: Article

References (20)

1. Shenai K., Scott R.S., and Baliga B.J. Optimum semiconductors for high-power electronics. IEEE Trans Elecron Dev 36 (1989) 1811-1823
2. Palmour JW, Singh R, Glass R, Kordina O, Carter CHJ. Power semiconductor devices and IC's. In: ISPSD; 1997.
3. Casady J.B., and Jonson R.W. Status of silicon carbide (SiC) as a wide-bandgap. Semiconductor for high temperature applications: a review. Solid-State Electron 39 (1996) 1409-1422
4. Agarwal A, Ryu SH. Status of SiC power devices and manufacturing issues. In: CS MANTECH: Vancouver, British Columbia, Canada; 2006. p. 215-8.
5. Schorner R., Friedrichs P., Peters D., and Stephani D. Significantly improved performance of MOSFET's on silicon carbide using the 15R-SiC polytype. IEEE Electron Dev Lett 20 (1999) 241-244
6. 2: microstructure, nanochemistry, and near-interface traps. J Appl Phys 97 (2005) 034302
7. Habersat D.B., Lelis A.J., Lopez G., McGarrity J.M., and McLean F.B. On separating oxide charges and interface charges in 4H-SiC metal-oxide-semiconductor devices. Mater Sci Forum 527-529 (2005) 1007-1010
8. Chang K.C., Nuhfer N.T., Porter L.M., and Wahab Q. High carbon concentrations at the silicon dioxide - silicon carbide interface identified by electron energy loss spectroscopy. Appl Phys Lett 77 (2000) 2186-2188
9. 2 grown on 6H-SiC and on Si(1 0 0). Appl Phys Lett 74 (1999) 1448
10. Chung G.Y., Tin C.C., Williams J.R., McDonald K., Chanana R.K., Weller R.A., et al. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Dev Lett 22 (2001) 176
11. Maranowski M.M., and Cooper J.A. Time-dependent-dielectric-breakdown measurements of thermal oxides on N-type 6H-SiC. IEEE Trans Elecron Dev 46 (1999) 520-524
12. Krishnaswami S, Ryu SH, Heath B, Agarwal A, Palmour J, Geil B, et al. A study on the reliability and stability of high voltage 4H-SiC MOSFET devices. In: ICSCRM, Pittsburgh, Pennsylvania; 2005. p. 1313-6.
13. Lipkin L.A., and Palmour J.W. Insulator investigation on SiC for improved reliability. IEEE Trans Electron Dev 46 (1999) 525
14. Lelis AJ, Habersat D, Lopez G, McGarrity JM, McLean FB, Goldsman N. Bias stress-induced threshold-voltage instability of SiC MOSFETs. In: ICSCRM, Pittsburgh, Pennsylvania; 2005.
15. Lelis AJ, Habersat D, Olaniran F, Simons B, McGarrity J, McLean FB, et al. Time-dependent bias stress-induced instability of SiC MOS devices. In: MRS proceedings; 2006.
16. Gurfinkel M, Suehle J, Bernstein JB, Shapira Y, Lelis AJ, Habersat D. Ultra-fast measurements of VTH instability in SiC MOSFETs due to positive and negative constant bias stress. In: IRPS; 2007.
17. Baliga B.J. Silicon carbide power devices (2006), World Scientific Pub. Co. Inc.
18. Schroder D.K. Semiconductor material and device characterization. 2nd ed. (1998), Wiley-Interscience, New York
19. Stauffer L, Wiley T. Mobile ion monitoring by simultaneous triangular voltage sweep. In: Solid state technology - metrology supplement, vol. 38; 1995.
20. Trost JR, Ridley RS, Khan MK, Grebs T, Evans H, Arthur S, The effect of charge in junction termination extension passivation dielectrics. In: Proceedings of the 11th international symposium power semiconductor devices and Ics, Toronto, Ont., Canada; 1999.