A new degradation mechanism in high-voltage SiC power MOSFETs

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 587-589

  Agarwal, Anant ^a   Fatima, Husna ^a   Haney, Sarah ^a   Ryu, Sei Hyung ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b Wayne State University   (United States)

Author keywords

Dislocations; Electron mobility; Power MOSFETs; Reliability; Silicon carbide; Stacking faults (SFs)

Indexed keywords

BLOCKING MODE; MINORITY CARRIER LIFETIME; UNIPOLAR DEVICES;

DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; LEAKAGE CURRENTS; SILICON CARBIDE; STACKING FAULTS;

MOSFET DEVICES;

EID: 34447264585     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.897861     Document Type: Article

References (8)

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