Time-dependent bias stress-induced instability of SiC MOS devices

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 335-340

  Lelis, Aivars ^a   Habersat, Daniel ^a   Olaniran, Fatimat ^a   Simons, Brian ^a   McGarrity, James ^b   McLean, F Barry ^b   Goldsman, Neil ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Berkeley Research Associates   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); SILICON CARBIDE; STRESS ANALYSIS; THRESHOLD VOLTAGE;

FLATBAND VOLTAGE; GATE OXIDE; GATE-BIAS STRESS; STRESS-INDUCED INSTABILITY;

MOS CAPACITORS;

EID: 33750370796     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b13-05     Document Type: Conference Paper

References (7)

1. S.K. Powell, N. Goldsman, J.M. McGarrity, and J. Bernstein, J. Appl. Phys. 92 (2002), p 4053.
2. A.J. Lelis, D. Habersat, G. Lopez, J. McGarrity, F.B. McLean, and N. Goldsman, Materials Science Forum (Proceedings of the 2005 ICSCRM), to be published.
3. B.E. Deal, IEEE Trans. Elec. Dev., ED-27 (1980), p. 606.
4. S. Dhar, S.T. Pantelides, L.C. Feldman, T. Isaacs-Smith, S. Wang, and J.R. Williams, Materials Science Forum (Proceedings of the 2005 ICSCRM), to be published.
5. D. Habersat, A.J. Lelis, G. Lopez, J. McGarrity, and F.B. McLean, Materials Science Forum (Proceedings of the 2005 ICSCRM), to be published.
6. K.C. Chang, N.T. Nuhfer, L.M. Porter, and Q. Wahab, Appl. Phys. Lett., 77:14 (2000), p 2186.
7. G.G. Jernigan, R.E. Stahlbush, M.K. Das, J.A. Cooper, Jr., and L.A. Lipkin, Appl. Phys. Lett., 74:10 (1999), p 1448.