Charge trapping in SiC power MOSFETs and its consequences for robust reliability testing

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 1085-1088

  Green, Ronald ^a   Lelis, Aivars ^a   Habersat, Daniel ^a  

^a NONE   (United States)

Author keywords

Charge trapping; DMOSFET; HTGB; SiC

Indexed keywords

CHARGE TRAPPING; POWER MOSFET; RELIABILITY; SILICON CARBIDE; TESTING; THRESHOLD VOLTAGE;

DEVICE RELIABILITY; DMOSFET; HTGB; POWER MOSFETS; RELIABILITY TEST; ROBUST RELIABILITY; SIC MOSFET; TEST METHOD;

BORON COMPOUNDS;

EID: 84861414689     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.1085     Document Type: Conference Paper

References (6)

1. JESD22-A108C, (2005).
2. MIL-STD-750E, (2006).
3. AEC Q101-Rev-C, (2005).
4. A. Lelis, R. Green, and D. Habersat, Mater. Sci. Forum, vols. 679-680, (2011) 599-602.
5. M. Treu, R. Rupp, and G. Sölkner, IEEE IRPS, (2010), 156-161.
6. D. Habesat, A. Lelis, R. Green, to be presented at the 2011 ICSCRM