Charge pumping measurements on SiC MOSFETs

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 985-988

  Scozzie, C J ^a   McGarrity, J M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Charge Pumping; Electrical and Thermal Stress Effects; Interface Traps; MOSFETs; SiC

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CHARGE; EPITAXIAL GROWTH; GATES (TRANSISTOR); OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; THERMAL STRESS; THYRISTORS;

CHARGE PUMPING TECHNIQUES; ELECTRICAL STRESS; MOS CONTROLLED THYRISTORS (MCT);

MOSFET DEVICES;

EID: 0031675102     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.985     Document Type: Article

References (4)

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2. J. Lee, C. Hegarty, and C. Hu, "Electrical Characteristics of MOSFETs Using Low Pressure Chemical-Vapor-Deposited Oxide, IEEE Elec. Dev. Lett., Vol. 9, No. 7, July 1988.
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