Key reliability issues for SiC power MOSFETs

ECS Transactions

Volumn 58, Issue 4, 2013, Pages 87-93

  Lelis, A ^a   Habersat, D ^a   Green, R ^a   Mooro, E ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE;

HIGH-TEMPERATURE BIAS; MEASUREMENT CONDITIONS; POWER MOSFETS; RELIABILITY TESTING; SIC MOSFETS; STRONG DEPENDENCES; THRESHOLD-VOLTAGE INSTABILITIES;

MOSFET DEVICES;

EID: 84904891503     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05804.0087ecst     Document Type: Conference Paper

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