Effect of stress and measurement conditions in determining the reliability of SIC power mosfets

ECS Transactions

Volumn 50, Issue 3, 2013, Pages 251-256

  Lelis, A ^a   Green, R ^a   El, M ^a   Habersat, D ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; RELIABILITY; SILICON CARBIDE; THRESHOLD VOLTAGE;

EFFECT OF STRESS; INTERFACIAL CHARGE; INTERFACIAL OXIDES; MEASUREMENT CONDITIONS; MEASUREMENT SPEED; RELIABILITY MEASUREMENTS; STRONG DEPENDENCES; THRESHOLD-VOLTAGE INSTABILITIES;

POWER MOSFET;

EID: 84885768316     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05003.0251ecst     Document Type: Conference Paper

References (14)

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