Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs - A combined DCIV/SDR study

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 529-532

  Aichinger, Thomas ^a   Lenahan, Patrick M ^a   Peters, Dethard ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Electrically detected magnetic resonance; MOSFET; Negative bias temperature instability; Polyheater; Polysilicon heater; Silicon carbide

Indexed keywords

DEFECTS; ENERGY GAP; MAGNETIC RESONANCE; MOSFET DEVICES; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE TEMPERATURE COEFFICIENT; SILICA; SILICON OXIDES; THERMODYNAMIC STABILITY;

DIRECT-CURRENT CURRENT-VOLTAGE TECHNIQUES; ELECTRICAL CHARACTERIZATION; ELECTRICALLY DETECTED MAGNETIC RESONANCES; ELEVATED TEMPERATURE; MOS-FET; POLYHEATER; RECOMBINATION CURRENTS; SPIN-DEPENDENT RECOMBINATION;

SILICON CARBIDE;

EID: 84874054441     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.529     Document Type: Conference Paper

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