Novel approach for improving interface quality of 4H-SiC MOS devices with UV irradiation and subsequent thermal annealing

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 741-744

  Watanabe, Heiji ^a   Ikeguchi, Daisuke ^a   Kirino, Takashi ^a   Mitani, Shuhei ^b   Nakano, Yuki ^b   Nakamura, Takashi ^b   Hosoi, Takuji ^a   Shimura, Takayoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

Carbon related defect; Interface state density; MOS device; UV induced damage

Indexed keywords

ANNEALING; CAPACITANCE; DEFECTS; IRRADIATION; MOS DEVICES; SILICA; SILICON CARBIDE; SILICON OXIDES;

CAPACITANCE-VOLTAGE CURVE; FLAT-BAND VOLTAGE SHIFT; INTERFACE QUALITY; INTERFACE STATE DENSITY; THERMAL-ANNEALING; THERMALLY GROWN OXIDE; ULTRAVIOLET LIGHTS; UV INDUCED;

INTERFACE STATES;

EID: 84874051212     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.741     Document Type: Conference Paper

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