Efficient characterization of threshold voltage instabilities in SiC nMOSFETs using the concept of capture-emission-time maps

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 757-760

  Pobegen, Gregor ^a   Grasser, Tibor ^b  

^a Kompetenzzentrum Automobil und Industrie Elektronik Gmbh   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Cap ture emission time constants; Defects; Drain current instability; Reliability; SiC MOSFET; Traps; Vth instabilities

Indexed keywords

CHARGE TRANSFER; DEFECTS; DRAIN CURRENT; RELIABILITY; SILICA; SILICON CARBIDE; SILICON OXIDES; THRESHOLD VOLTAGE; WIDE BAND GAP SEMICONDUCTORS;

CURRENT INSTABILITY; SIC MOSFET; TIME CONSTANTS; TRAPS; VTH INSTABILITIES;

MOSFET DEVICES;

EID: 84874087595     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.757     Document Type: Conference Paper

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