Evaluation of PBTS and NBTS in SiC MOS using in situ charge pumping measurements

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 545-548

  Habersat, Daniel B ^a   Lelis, Aivars J ^a   Green, R ^a   El, M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

BTS; Charge pumping; Interface traps; MOSFET; Oxide traps; Reliability

Indexed keywords

CHARGE TRAPPING; DEGRADATION; MOS DEVICES; MOSFET DEVICES; POWER SEMICONDUCTOR DEVICES; RELIABILITY; SILICON CARBIDE; THRESHOLD VOLTAGE;

ACCELERATED DEGRADATION; CHARGE PUMPING; CHARGE PUMPING MEASUREMENTS; INTERFACE TRAPS; MOS-FET; OXIDE TRAPS; THRESHOLD-VOLTAGE INSTABILITIES; TYPICAL OPERATING CONDITIONS;

ELECTRIC GROUNDING;

EID: 84874031616     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.545     Document Type: Conference Paper

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