Coexistence of small threshold voltage instability and high channel mobility in 4H-SiC(0001̄) metal-oxide-semiconductor field-effect transistors

Applied Physics Express

Volumn 5, Issue 4, 2012, Pages

  Okamoto, Mitsuo ^a   Makifuchi, Youichi ^a   Iijima, Miwako ^a   Sakai, Yoshiyuki ^a   Iwamuro, Noriyuki ^a   Kimura, Hiroshi ^b   Fukuda, Kenji ^a   Okumura, Hajime ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; FLAT-BAND VOLTAGE; GATE OXIDATION; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; POSTOXIDATION ANNEALING; VOLTAGE INSTABILITY;

DIELECTRIC DEVICES; ELECTRIC PROPERTIES; MOS CAPACITORS; MOSFET DEVICES;

SILICON CARBIDE;

EID: 84860160794     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.041302     Document Type: Article

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