An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Cochrane, C J ^a   Lenahan, P M ^a   Lelis, A J ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C ATOMS; CHEMICAL COMPOSITIONS; DEEP-LEVEL DEFECTS; ELECTRICAL MEASUREMENT; ELECTRICALLY DETECTED MAGNETIC RESONANCES; HIGH DENSITY; HYDROGEN ATOMS; HYPERFINE INTERACTIONS; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; NARROW LINES; NEGATIVE BIAS; NEGATIVE GATE; OXYGEN DEFICIENT; PHASE SPECTRA; PROCESSING PARAMETERS; SILICON ATOM DEFECTS; SILICON ATOMS; SPIN-DEPENDENT RECOMBINATION; SYMMETRY AXIS; TRAP ASSISTED TUNNELING; UNPAIRED ELECTRONS;

ASTATINE; ATOMIC SPECTROSCOPY; ATOMS; DANGLING BONDS; DEFECTS; ELECTRIC FIELD EFFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; FIELD EFFECT TRANSISTORS; HYDROGEN; MAGNETIC RESONANCE; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; OXYGEN; SILICON CARBIDE; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78751555434     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3530600     Document Type: Article

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