A study of high temperature DC and AC gate stressing on the performance and reliability of power SiC MOSFETs

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 549-552

  Green, Ron ^a   Lelis, A J ^a   El, M ^a   Habersat, D B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

BTS; Interface traps; MOSFET; Oxide traps; Reliability

Indexed keywords

ELECTRONIC EQUIPMENT TESTING; RELIABILITY; SILICON CARBIDE; TEMPERATURE MEASUREMENT; THRESHOLD VOLTAGE;

BIAS TEMPERATURE STRESS; HIGH TEMPERATURE MEASUREMENT; INTERFACE TRAPS; MOS-FET; OXIDE TRAPS; PERFORMANCE AND RELIABILITIES; STATE-OF-THE-ART DEVICES; THRESHOLD-VOLTAGE INSTABILITIES;

MOSFET DEVICES;

EID: 84874098137     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.549     Document Type: Conference Paper

References (11)

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